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IXGA50N60B4 - High-Gain IGBTs

IXGA50N60B4_2019260.PDF Datasheet


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APT12GT60KR The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 25A
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
APT8GT60KR The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
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The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
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ADPOW[Advanced Power Technology]
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APT60GT60JR The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
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AD600AR-REEL AD600AR-REEL7 AD600JR-REEL AD600JR-RE Gain range:0 to 40dB ; -7.5V; 600mW; daual, low noise, wideband variable gain amplifier. For ultrasound and sonar time-gain control, high performance audio and RF AGC systems and signal measurement
Analog Devices
IRGP430U Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管(IGBTs)(超快速绝缘栅型双极型晶体管)
500V Discrete IGBT in a TO-3P (TO-247AC) package
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APT50GF60B2RD APT50GF60LRD Fast IGBT & FRED 600V 80A
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
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Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
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